Low‐dimensional magnetism has been boosted by the recent discovery of the ferromagnetism in layered two‐dimensional (2D) semiconductors. Although the macroscopic magnetic moments of 2D ferromagnets are weak, the anomalous Hall effect (AHE) can serve as a versatile electric probe to their magnetic properties. Here, the nonvolatile electric‐field manipulation of the AHE in an ultrathin metallic ferromagnet with perpendicular magnetic anisotropy at room temperature is reported, which is achieved by the electrostatic modulation of the longitudinal resistivity via a ferroelectric substrate without varying magnetization. Therefore, this work demonstrates an electric‐field‐controlled room‐temperature memory device based on the zero‐magnetic‐field anomalous Hall resistance of an ultrathin ferromagnet. More importantly, the experimental results disentangle magnetization and anomalous Hall resistance. As a result, the study reveals a linear decrease of anomalous Hall conductivity with normal conductivity, which is distinct from previous scaling relations. Accordingly, this work manifests a universe avenue to harnessing the AHE in low‐dimensional magnetic materials.

中文翻译：

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超薄磁性金属中异常霍尔效应的非易失性电控制

最近在层状二维（2D）半导体中发现铁磁性，从而促进了低维磁性。尽管2D铁磁体的宏观磁矩很弱，但异常霍尔效应（AHE）可以用作其磁特性的多功能电探针。在这里，报道了在室温下具有垂直磁各向异性的超薄金属铁磁体中AHE的非易失性电场操纵，这是通过在不改变磁化强度的情况下通过铁电基片对纵向电阻率进行静电调制而实现的。因此，这项工作展示了一种基于超薄铁磁体的零磁场异常霍尔电阻的电场控制室温存储设备。更重要的是，实验结果解开了磁化强度和霍尔电阻的异常。结果，该研究揭示了异常霍尔电导率与正常电导率的线性下降，这与以前的比例关系不同。因此，这项工作表明了在低维磁性材料中利用AHE的宇宙途径。