A room‐temperature‐processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smooth area‐dependent switching over two orders of magnitude, which conserves the current rectification and allows for analog control over the resistance states (dependence of device history and applied voltage stimuli). This secondary mechanism involves ion exchange or charge trapping at the Schottky interface without a contribution from the bulk (hence, it is termed 2D), which is reported for the first time for an amorphous oxide semiconductor switching matrix.

中文翻译：

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基于非晶锌氧化锡肖特基二极管的二维电阻开关

提出了一种室温处理的电阻式开关肖特基二极管，该二极管可以以两种不同的模式工作，这完全取决于器件初始化模式的选择。二极管反极性的电铸会导致突然的丝状开关，其固有的长数据保留时间，但以整流为代价。在该电铸过程之后，器件可以以至少两个数量级的电阻窗口以双极或单极方式工作。正向的设备初始化显示了两个区域上平滑的面积相关切换，这节省了电流整流并允许对电阻状态进行模拟控制（取决于设备历史和所施加的电压激励）。