Metal oxide thin-film transistors are increasingly used in the driving backplanes of organic light-emitting diode displays. Commercial devices currently rely on metal oxides processed via physical vapour deposition methods, but the use of solution-based processes could provide a simpler, higher-throughput approach that would be more cost effective. However, creating oxide transistors with high carrier mobility and bias-stable operation using such processes has proved challenging. Here we show that transistors with high electron mobility (50 cm² V⁻¹ s⁻¹) and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide. Insertion of the ozone-treated polystyrene interlayer passivates electron traps in the channel and reduces bias-induced instability during continuous transistor operation over a period of 24 h and under a high electric-field flux density (2.1 × 10⁻⁶ C cm⁻²). Furthermore, incorporation of the pre-synthesized aluminium-doped zinc oxide nanoparticles enables controlled n-type doping of the hybrid channels, providing additional control over the operating characteristics of the transistors.

在有机发光二极管显示器的驱动背板中越来越多地使用金属氧化物薄膜晶体管。商业设备当前依赖于通过物理气相沉积方法处理的金属氧化物，但是基于溶液的方法的使用可以提供更简单，更高通量的方法，这将更具成本效益。然而，使用这种工艺来创建具有高载流子迁移率和偏置稳定操作的氧化物晶体管已被证明是具有挑战性的。在这里，我们显示了具有高电子迁移率（50 cm ²  V ^-1 s ^-1的晶体管）和操作稳定性可以由溶液处理的多层通道制成，该通道由氧化铟，氧化锌纳米颗粒，臭氧处理的聚苯乙烯和致密氧化锌的超薄层组成。臭氧处理的聚苯乙烯中间层的插入钝化了通道中的电子陷阱，并降低了在连续晶体管工作24 h期间和高电场通量密度（2.1×10 ^-6  C cm ^-2）下偏置引起的不稳定性。。此外，掺入预合成的铝掺杂的氧化锌纳米颗粒能够实现混合通道的受控n型掺杂，从而提供了对晶体管工作特性的额外控制。