Controlled synthesis of 2D structures on nonmetallic substrate is challenging, yet an attractive approach for the integration of 2D systems into current semiconductor technologies. Herein, the direct synthesis of high-quality 2D antimony, or antimonene, on dielectric copper oxide substrate by molecular beam epitaxy is reported. Delicate scanning tunneling microscopy imaging on the evolution intermediates reveals a segregation growth process on Cu3 O2 /Cu(111), from ordered dimer chains to packed dot arrays, and finally to monolayer antimonene. First-principles calculations demonstrate the strain-modulated band structures in antimonene, which interacts weakly with the oxide surface so that its semiconducting nature is preserved, in perfect agreement with spectroscopic measurements. This work paves the way for large-scale growth and processing of antimonene for practical implementation.

中文翻译：

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在氧化铜上大规模合成可调节应变的半导体锑。

在非金属衬底上进行2D结构的受控合成具有挑战性，但将2D系统集成到当前半导体技术中的诱人方法仍然是一种有吸引力的方法。在本文中，报道了通过分子束外延在介电氧化铜衬底上直接合成高质量的二维锑或锑。在进化中间体上的精细扫描隧道显微镜成像揭示了在Cu3O2 / Cu（111）上的分离生长过程，从有序的二聚体链到堆积的点阵，最后到单层锑。第一性原理计算证明了锑中的应变调制能带结构，该结构与氧化物表面的相互作用较弱，因此保留了其半导体性质，与光谱测量结果完全吻合。