Abstract A simple and efficient solid iodination method has been proposed for the fabrication of p-type γ-CuI thin films. The structural, morphological, optical, electrical and electrochemical properties have been investigated in order to serve as an effective hole-transporting layer in solid-state solar cells. The fabricated films exhibited p-type conductivity with resistivity of 7.0 × 10−2 Ω cm, the hole concentration of ~1.13 × 1019 cm−3 and the mobility of 18.34 cm−2 V−1 s−1. The cyclic voltammetry result shows a maximum specific capacitance of 43 mF/cm2 at a scan rate of 10 mV/s. The cyclic stability and capacitance retention were found to be 99.7%. These findings demonstrate that γ-CuI film can be a potential candidate for multiple applications, such as a hole transporting material for solid-state solar cells and electrochemical supercapacitor.

中文翻译：

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固体碘化法制备γ-CuI薄膜的光电和电化学行为

摘要 提出了一种简单有效的固体碘化方法来制备 p 型 γ-CuI 薄膜。为了在固态太阳能电池中充当有效的空穴传输层，已经研究了结构、形态、光学、电学和电化学性质。制造的薄膜表现出 p 型导电性，电阻率为 7.0 × 10-2 Ω cm，空穴浓度为~1.13 × 1019 cm-3，迁移率为 18.34 cm-2 V-1 s-1。循环伏安法结果显示，在 10 mV/s 的扫描速率下，最大比电容为 43 mF/cm2。发现循环稳定性和电容保持率为 99.7%。这些发现表明 γ-CuI 薄膜可以成为多种应用的潜在候选材料，