CF₄ plasma treatment on n⁺-Si wafers as bottom electrodes (BEs) of poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) metal-ferroelectric-metal (MFM) capacitors has been investigated in this study. Prior to the fabrication of MFM capacitors, comprehensive material analyses are administered to identify the incorporation of fluorine atoms into P(VDF-TrFE) copolymers, revealing an enrichment in C₂HF₃ (trifluoroethylene) bonds and an improvement in the crystallinity of the film. The P(VDF-TrFE) MFM capacitors with CF₄-plasma-treated n⁺-Si wafers show a shallower charge trapping level of 0.154–0.226 eV extracted from the Frenkel–Poole (F–P) emission at 213–273 K for the BE injection compared to that for the top electrode (TE) injection, which is ascribed to the passivation of deep traps by the fluorine atoms that diffused from the n⁺-Si wafers. Thus, asymmetric remanent polarization and a negative internal bias field are obtained because of the significant increase in the β-phase at the bottom of the P(VDF-TrFE) films. With the CF₄ plasma treatment for 1 min, the P(VDF-TrFE) MFM capacitors demonstrate a remanent polarization (2P_r) of 6.58 µC/cm², a coercive electric field (E_c) of 0.47 MV/cm and stability for more than 3 × 10⁴ cycles with negligible fatigue, making the fluorine-incorporated P(VDF-TrFE) copolymers suitable for future high-performance nonvolatile memory applications.

在本研究中，已研究了在n ⁺ -Si晶片上作为聚（偏二氟乙烯-三氟乙烯-共-三氟乙烯）（P（VDF-TrFE））金属铁电金属（MFM）电容器的底部电极（BE）的CF ₄等离子体处理。在制造MFM电容器之前，需要进行全面的材料分析，以确定氟原子是否已掺入P（VDF-TrFE）共聚物中，从而揭示了C ₂ HF ₃（三氟乙烯）键的富集和薄膜结晶度的提高。 。带有CF _4-等离子体处理过的n ⁺ -Si晶片的P（VDF-TrFE）MFM电容器显示出从Frenkel-Poole（F–P）与顶部电极（TE）注入相比，BE注入在213–273 K处发射，这归因于从n ⁺ -Si晶片扩散的氟原子对深阱的钝化。因此，由于P（VDF-TrFE）膜底部β相的显着增加，获得了不对称的剩余极化和负的内部偏置场。通过CF ₄等离子体处理1分钟，P（VDF-TrFE）MFM电容器表现出6.58 µC / cm ²的剩余极化（2 P _r），0.47 MV / cm的矫顽电场（E _c）和稳定性超过3×10 ⁴ 循环可忽略不计的疲劳，使得含氟的P（VDF-TrFE）共聚物适合未来的高性能非易失性存储应用。