Although vanadium oxide (VO_x) phases are thermodynamically similar, Y‐stabilized ZrO₂ (YSZ) substrates show selective growth as single‐crystalline films. However, in this study, we find that the films degrade with the formation of nanoislands when evaporating VO_x onto YSZ at a substrate temperature >500 °C. The nanoislands are epitaxial, i.e., Y‐doped VO₂(R) at an oxygen partial pressure $P_{{\mathrm{O}}_2}$ < 30 mTorr, and YVO₄ at $P_{{\mathrm{O}}_2}$ > 50 mTorr. Energy‐dispersive X‐ray spectroscopy shows that the rapid diffusion of vanadium and yttrium plays a critical role in film degradation. The degradation mechanism revealed herein guides the fabrication of VO_x films for energy and electronic device applications.

中文翻译：

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在高于500°C的Y稳定的ZrO2上生长钒氧化物薄膜的降解机理

尽管氧化钒（VO _x）相在热力学上相似，但Y稳定的ZrO ₂（YSZ）衬底显示出单晶膜的选择性生长。但是，在这项研究中，我们发现，当衬底温度> 500°C时，将VO _x蒸发到YSZ上时，薄膜会随着纳米岛的形成而降解。纳米岛是外延的，即在氧分压下掺杂Y的VO ₂（R）$P_{{\mathrm{Ø}}_{\mathrm{2个}}}$ <30 mTorr，YVO ₄在$P_{{\mathrm{Ø}}_{\mathrm{2个}}}$ > 50毫托 X射线能谱分析表明，钒和钇的快速扩散在薄膜降解中起关键作用。降解机理揭示本文引导VO的制造_X为能量和电子器件应用的膜。