Vanadium dioxide (VO₂) thin films are among the promising candidates for smart optical materials and energy‐saving devices with a metal–insulator transition (MIT) near room temperature. The modulation of hysteresis width (ΔT_c) and optical characteristics of the solar spectral band (T_sol) during the MIT of vanadium oxides used for thermochromic devices is still challenging. In this article, we describe Al‐doped VO₂ thin films with modulated visible spectral band (T_vis) and ΔT_c. The control of the Al/V ratio and Al‐doping‐induced VO₂ (B) phases in VO₂ is achieved by combining atomic layer deposition and post‐annealing processes. With increasing Al/V ratio, the content of VO₂ (B) phases increases in VO₂ (M). ΔT_vis, ΔT_c, and Al‐doping‐induced VO₂ (B) phases are found to be dependent on the aluminum content in thin films. ΔT_vis up to 21.18% and ΔT_c down to 3.3 K for Al‐doped VO₂ may be attributed to the coordinated interaction of both Al doping and the VO₂ (B) phases in the VO₂ matrix during MIT. These modulations may allow an understanding of the essential physics behind the MIT of doped VO₂ and thus fabrication of smart optical sensors, energy‐saving devices, and even ultrafast Mott transistors.

中文翻译：

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VO2（M）中的Al掺杂诱导的VO2（B）相向具有调制ΔTvis和ΔTc的智能光学薄膜

二氧化钒（VO ₂）薄膜是智能光学材料和在室温附近具有金属-绝缘体转变（MIT）的节能设备的有希望的候选材料之一。在用于热致变色器件的钒氧化物的MIT期间，磁滞宽度（ΔT _c）的调制和太阳光谱带的光学特性（T _sol）仍然具有挑战性。在本文中，我们描述了具有调制的可见光谱带（T _vis）和ΔT _c的Al掺杂的VO ₂薄膜。所述Al / V比和Al掺杂诱导VO的控制₂（B）相在VO ₂通过结合原子层沉积和后退火工艺来实现。随着Al / V比的增加，VO ₂（M）中VO ₂（B）相的含量增加。发现ΔT _vis，ΔT _c和Al掺杂引起的VO ₂（B）相取决于薄膜中的铝含量。Δ Ť_可见高达21.18％和Δ Ť _Ç下降到3.3 K中掺杂Al的VO ₂可以归因于这两种掺杂Al和VO的协调相互作用₂（B）在VO阶段₂麻省理工学院期间的矩阵。通过这些调制，可以了解MIT掺杂的VO ₂背后的基本物理原理，从而可以制造智能光学传感器，节能设备，甚至是超快Mott晶体管。