The devices based on SiO₂ electret have significant applications in various MEMS sensors. However, the charge stability of SiO₂ electret suffered from the water percolation, which seriously restricts its application. In this work, the long‐term charge stability of the SiO₂ nanoarray electret (SiO₂ NAE) without any water repellent treatment is demonstrated. When the oxidation time is 1.5 h, the potential decay of the SiO₂ NAE is less than 46% during 60 days with an original potential of −120 V. The long‐term charge stability of the SiO₂ NAE is attributed to its unique charge decay process and the large H₂O diffusion barrier in the SiO₂ NAE: firstly, the charge trapped in the planar part of the SiO₂ NAE decays rapidly. Then, residual charge stored in the SiO₂ nanoarray. Eventually, the large H₂O diffusion barrier in the interface of Si/SiO₂ effectively hinders the charge decay. In addition, we demonstrate the unique charge stability of nanoelectret, which has a promising application in developing high performance electret‐based devices.

中文翻译：

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SiO2纳米阵列驻极体的电荷分布和稳定性

基于SiO ₂驻极体的器件在各种MEMS传感器中具有重要的应用。然而，SiO ₂驻极体的电荷稳定性会遭受水的渗透作用，这严重限制了其应用。在这项工作中，证明了未经任何疏水处理的SiO ₂纳米阵列驻极体（SiO ₂ NAE）的长期电荷稳定性。当氧化时间为1.5小时，在SiO的电位衰减₂ NAE是期间60天与-120 V的的原始电位小于46％一氧化硅的长期电荷稳定性₂ NAE归因于其独特的电荷衰变过程和SiO _2中较大的H ₂ O扩散势垒NAE：首先，捕获在SiO ₂ NAE的平面部分中的电荷迅速衰减。然后，残留电荷存储在SiO ₂纳米阵列中。最终，Si / SiO ₂界面中较大的H ₂ O扩散势垒有效地阻止了电荷衰减。此外，我们证明了纳米驻极体的独特电荷稳定性，在开发基于高性能驻极体的器件方面具有广阔的应用前景。