Abstract Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)0.25 – (Ga2S3)0.75 single crystal which is one of the member of (Ga2Se3)x – (Ga2S3)1-x mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)0.25 – (Ga2S3)0.75 single crystals in the 10–300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study.

中文翻译：

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(Ga2Se3)0.25 – (Ga2S3)0.75 单晶化合物的热释光表征

摘要 Ga2Se3 和Ga2S3 化合物因其在光伏领域的潜在应用而备受关注。缺陷和杂质可能会影响光电器件的质量。因此，确定与缺陷和/或杂质相关的陷阱的参数（活化能、动力学顺序、频率因子）是值得的。本论文的目的是研究 (Ga2Se3)0.25 – (Ga2S3)0.75 单晶的俘获参数，该单晶是 (Ga2Se3)x – (Ga2S3)1-x 混晶的成员之一。为此，在 10–300 K 区域对 (Ga2Se3)0.25 – (Ga2S3)0.75 单晶进行了热释光 (TL) 实验。还使用 0.2 和 1 之间的各种加热速率记录了 TL 光谱。0 K/s 和停止温度从 30 到 60 K，以获得有关捕获参数特征的详细信息。TL 辉光曲线显示出重叠峰。停止温度实验数据表明，陷阱在带隙内呈现准连续分布。应用初始上升法分析来获得准连续分布的显露陷阱的活化能。随着停止温度从 30 增加到 60 K，分布式陷阱的热活化能从 108 meV 增加到 246 meV。本研究还报告了所用化合物的结构特征（晶格常数和组成元素的原子组成）。停止温度实验数据表明，陷阱在带隙内呈现准连续分布。应用初始上升法分析来获得准连续分布的显露陷阱的活化能。随着停止温度从 30 增加到 60 K，分布式陷阱的热活化能从 108 meV 增加到 246 meV。本研究还报告了所用化合物的结构特征（晶格常数和组成元素的原子组成）。停止温度实验数据表明，陷阱在带隙内呈现准连续分布。应用初始上升法分析来获得准连续分布的显露陷阱的活化能。随着停止温度从 30 增加到 60 K，分布式陷阱的热活化能从 108 meV 增加到 246 meV。本研究还报告了所用化合物的结构特征（晶格常数和组成元素的原子组成）。