Abstract InAsSb ternary alloys can be considered as an alternative to HgCdTe for mid-wavelength, as well as long-wavelength infrared applications. Its energy bandgap exhibits nonlinearity versus Sb composition, and hence the correct determination of its value is necessary for the effective design and simulation of optoelectronic devices. The commonly used expression on the InAsSb energy bandgap provided by Wieder and Clawson overestimated energy bandgap values at high temperatures. In this paper, we present two modified empirical relationships which are based on the experimental data obtained in our laboratory and published literature. Both are correct for a wide range of Sb molar composition and temperatures. The nonlinearity of the energy gap is described with the adequate bowing parameter. The data collected in our experiment, for samples grown on lattice mismatched GaAs substrates, fits well with a bowing factor of C = 0.72 eV. The minimum bandgap energy that can be reached at room temperature is about 73 meV for a Sb mole fraction, x = 0.63. In comparison, the bandgap at low temperatures collected in the literature for samples grown on lattice-matched GaSb substrates is smaller than the measured values in our experiment and fits well with a parabola with C = 0.9 eV.

中文翻译：

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通过分子束外延在 GaAs 衬底上生长的 InAsSb 外延层的带隙能量测定

摘要 InAsSb 三元合金可被视为 HgCdTe 的替代品，用于中波长和长波长红外应用。其能带隙与 Sb 成分呈非线性关系，因此正确确定其值对于光电器件的有效设计和模拟是必要的。Wieder 和 Clawson 提供的 InAsSb 能带隙的常用表达式高估了高温下的能带隙值。在本文中，我们基于在我们实验室获得的实验数据和已发表的文献，提出了两种修正的经验关系。两者都适用于大范围的 Sb 摩尔组成和温度。能隙的非线性用足够的弯曲参数来描述。在我们的实验中收集的数据，对于在晶格失配的 GaAs 衬底上生长的样品，与 C = 0.72 eV 的弯曲因子非常吻合。对于 Sb 摩尔分数 x = 0.63，在室温下可以达到的最小带隙能量约为 73 meV。相比之下，文献中收集的在晶格匹配 GaSb 衬底上生长的样品在低温下的带隙小于我们实验中的测量值，并且与 C = 0.9 eV 的抛物线拟合得很好。