Transparent thin films of pure ZnO, Ca-doped ZnO (CZO), and Ga-doped ZnO (GZO) were deposited on glass by RF magnetron sputtering. The influence of calcium and gallium concentrations in zinc oxide (ZnO) films on structural, morphology, electrical, and optical properties of thin films were studied. XRD results show that the obtained films were with a hexagonal wurtzite structure and preferentially oriented perpendicular to the substrate surface. Atomic force microscopy (AFM) evidenced that the type of doping modifies the microstructure of thin films. The as-deposited films show a high transmittance in the visible range over 85%. The shift of the optical band gap of ZnO films with increasing Ca and Ga content suggests the enhancement of carrier concentration. At Ga-doped ZnO, the film has lowest resistivity of 3.8 × 10⁻³ cm, while the carrier concentration is highest (2.2 × 10²⁰ cm⁻³).

通过RF磁控溅射在玻璃上沉积纯ZnO，Ca掺杂的ZnO（CZO）和Ga掺杂的ZnO（GZO）的透明薄膜。研究了氧化锌（ZnO）膜中钙和镓的浓度对薄膜的结构，形态，电学和光学性质的影响。XRD结果表明，所获得的膜具有六方纤锌矿结构，并且优选垂直于基材表面取向。原子力显微镜（AFM）证明，掺杂类型改变了薄膜的微观结构。所沉积的膜在可见光范围内显示超过85％的高透射率。ZnO薄膜的光学带隙随Ca和Ga含量的增加而变化，表明载流子浓度增加。在掺杂Ga的ZnO上，薄膜的最低电阻率为3.8×10 ^-3 厘米，而载流子浓度最高（2.2×10 ²⁰  cm ^-3）。