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Electrical property modified hole transport layer (PEDOT:PSS) enhance the efficiency of perovskite solar cells: hybrid co-solvent post-treatment
Organic Electronics ( IF 3.2 ) Pub Date : 2019-12-09 , DOI: 10.1016/j.orgel.2019.105582
Ping Li , Mohamed Ibrahim Omer Mohamed , Cunyun Xu , Xizu Wang , Xiaohong Tang

Poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) layer as a hole transport layer (HTL) plays a key role in efficient hole extraction and transportation of the inverted planar perovskite solar cells (PSCs). However, the insulating nature of PSS lead to lower electrical property of the PEDOT:PSS film, which impedes transferring hole and results in a low photocurrent of the PSCs. In this work, dimethylformamide (DMF), methanol and their mixture solvents (co-solvent) were employed to treat the PEOT:PSS thin film after deposition with different methods to enhance the film’s electrical conductivity. Electrical conductivity of the PEDOT:PSS films was increased from 10-3 S.cm-1 to ∼102 S.cm-1 after the co-solvents treatment. Using the highest conductivity co-solvent treated PEDOT:PSS thin film as the HTL in a perovskite solar cell, the power conversion efficiency (PCE) of the device has been measured improved by 17.5% as compared with that of the control device with the untreated PEDOT:PSS film as the HTL. This result shows that the hybrid co-solvent post-treatment is a simple and feasible way to modified the electrical properties of the PEDOT:PSS film as the HTL for high efficient PSCs and other thin film electronic and optoelectronic devices.



中文翻译:

电气性能改进的空穴传输层(PEDOT:PSS)增强了钙钛矿太阳能电池的效率:混合助溶剂后处理

聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT:PSS)层作为空穴传输层(HTL)在有效的空穴提取和反向平面钙钛矿太阳能电池(PSC)的传输中起着关键作用。但是,PSS的绝缘性导致PEDOT:PSS膜的电性能降低,从而阻碍了传输空穴并导致PSC的光电流较低。在这项工作中,使用二甲基甲酰胺(DMF),甲醇及其混合溶剂(助溶剂)在沉积后采用不同的方法处理PEOT:PSS薄膜,以提高薄膜的电导率。PEDOT:PSS薄膜的电导率从10 -3 S.cm -1增加到〜10 2 S.cm -1共溶剂处理后。使用最高电导率共溶剂处理的PEDOT:PSS薄膜作为钙钛矿太阳能电池中的HTL,与未处理的对照设备相比,该设备的功率转换效率(PCE)已提高了17.5%。 PEDOT:PSS胶片作为HTL。该结果表明,混合助溶剂后处理是一种简单可行的方法,可将PEDOT:PSS膜的电学性质作为HTL用于高效PSC和其他薄膜电子和光电器件。

更新日期:2019-12-11
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