Abstract This paper describes the influence of plasma enhanced chemical vapor deposition (PECVD) deposition temperature on heavily doped silicon based (doped-Si/SiOx) passivating contacts for silicon solar cells. The doped-Si films are obtained by PECVD intrinsic amorphous silicon (a-Si) and a subsequent thermal POCl3 diffusion process. By changing the deposition temperature of PECVD, a-Si films with different degrees of crystallinity and density can be obtained. These differences between the a-Si films result in different properties of the passivating contacts in terms of passivation quality and carrier selectivity. By exploring a range of PECVD deposition temperatures from 250 °C to 470 °C, the best passivation quality is obtained at a temperature of 420 °C. On the other hand, the contact resistivity decreases with increasing deposition temperature. After studying the a-Si properties and the resulting passivating contact properties, we obtain optimal passivating contacts with a high implied open-circuit voltage (iVoc) of 742 mV and a low contact resistivity ρc of 6.4 mΩ∙cm2.

中文翻译：

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PECVD沉积温度对掺磷多晶硅钝化触点的影响

摘要 本文描述了等离子体增强化学气相沉积 (PECVD) 沉积温度对硅太阳能电池的重掺杂硅基 (掺杂-Si/SiOx) 钝化触点的影响。掺杂硅膜是通过 PECVD 本征非晶硅 (a-Si) 和随后的热 POCl3 扩散工艺获得的。通过改变PECVD的沉积温度，可以获得不同结晶度和密度的a-Si薄膜。a-Si 薄膜之间的这些差异导致钝化触点在钝化质量和载流子选择性方面的不同特性。通过探索从 250 °C 到 470 °C 的一系列 PECVD 沉积温度，在 420 °C 的温度下获得最佳钝化质量。另一方面，接触电阻随沉积温度升高而降低。在研究了 a-Si 特性和由此产生的钝化接触特性后，我们获得了具有 742 mV 高隐含开路电压 (iVoc) 和 6.4 mΩ∙cm2 低接触电阻率 ρc 的最佳钝化接触。