Additional elements in Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber layers present a viable strategy to improve the performance of thin film solar cells. In this study, heterovalent cation doping by partially substituting metal cations with Ga³⁺ is explored by constructing a sandwich-like configuration. We demonstrated that a low doping level of Ga³⁺ can be successfully incorporated into the host lattice of CZTSSe to form a homogeneous Cu₂ZnSn(Ga) (S,Se)₄ (CZTGSSe) alloy material. Characterization was performed using SEM, EDS, XRD, Raman spectroscopy, and XPS, which showed that the material fabricated by this heterovalent cation doping method expressed high phase purity, appropriate valence components, and suitable optical bandgap, which are vital for high performance solar cells. As a result, the champion device achieves stabilized efficiency as high as 10.80%, improved by nearly 28% compared with only 8.43% for the reference device.

中文翻译：

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固溶处理的Cu2ZnSn（S，Se）4太阳能电池中的异质Ga3 +掺杂，具有更好的光电性能

Cu ₂ ZnSn（S，Se）₄（CZTSSe）吸收层中的其他元素提出了提高薄膜太阳能电池性能的可行策略。在这项研究中，通过构造类似三明治的结构，探索了通过用Ga ³⁺部分取代金属阳离子来掺杂异价阳离子的方法。我们证明了低掺杂水平的Ga ³⁺可以成功地掺入CZTSSe的主晶格中，形成均匀的Cu ₂ ZnSn（Ga）（S，Se）₄（CZTGSSe）合金材料。使用SEM，EDS，XRD，拉曼光谱和XPS进行表征，结果表明，用这种异价阳离子掺杂方法制备的材料具有较高的相纯度，适当的价态成分和适当的光学带隙，这对于高性能太阳能电池至关重要。结果，冠军设备实现了高达10.80％的稳定效率，与参考设备的8.43％相比提高了近28％。