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GaP/GaPN core/shell nanowire array on silicon for enhanced photoelectrochemical hydrogen production
Chinese Journal of Catalysis ( IF 16.5 ) Pub Date : 2020-01-01 , DOI: 10.1016/s1872-2067(19)63465-0
Guancai Xie , Saad Ullah Jan , Zejian Dong , Yawen Dai , Rajender Boddula , Yuxuan Wei , Chang Zhao , Qi Xin , Jiao-Na Wang , Yinfang Du , Lan Ma , Beidou Guo , Jian Ru Gong

Abstract Simultaneously improving the efficiency and stability on a large scale is significant for the development of photoelectrochemical (PEC) water splitting systems. Here, we demonstrated a novel design of GaP/GaPN core/shell nanowire (NW) decorated p-Si photocathode for improved PEC hydrogen production performance compared to that of bare p-Si photocathode. The formation of the p-n junction between p-Si and GaP NW promotes charge separation, and the lower conduction band position of GaPN relative to that of GaP further facilitates the transfer of photogenerated electrons to the electrode surface. In addition, the NW morphology both shortens the carrier collection distance and increases the specific surface area, which result in superior reaction kinetics. Moreover, introduction of N in GaP is beneficial for enhancing the light absorption as well as stability. Our efficient and facile strategy can be applied to other solar energy conversion systems as well.

中文翻译:

用于增强光电化学产氢的硅上 GaP/GaPN 核/壳纳米线阵列

摘要 同时大规模提高效率和稳定性对于光电化学(PEC)水分解系统的发展具有重要意义。在这里,我们展示了 GaP/GaPN 核/壳纳米线 (NW) 装饰的 p-Si 光电阴极的新颖设计,与裸 p-Si 光电阴极相比,可提高 PEC 制氢性能。p-Si 和 GaP NW 之间 pn 结的形成促进了电荷分离,GaPN 相对于 GaP 的较低导带位置进一步促进了光生电子向电极表面的转移。此外,NW 形态既缩短了载流子收集距离,又增加了比表面积,从而产生了优异的反应动力学。而且,在 GaP 中引入 N 有利于提高光吸收和稳定性。我们高效而简便的策略也可以应用于其他太阳能转换系统。
更新日期:2020-01-01
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