Abstract ZnO/ZnS multiple-quantum wells (MQWs) were grown on Si substrates by atomic layer deposition, and their optical properties were investigated. Light emission well below the band-to-band transition energies of constituent materials was observed, which was attributed to the type-II band alignment of ZnO/ZnS MQWs. The type-II transition showed a significant blue shift with increasing excitation power, which originated from modified band bending caused by spatial separation of electrons and holes as electrons are confined in the ZnO conduction band quantum well and holes are confined in the ZnS valence band quantum well. The conduction band offset of the ZnO/ZnS heterojunction was determined to be 1.58 eV simulated from the type-II emission of the MQWs with controlled layer thicknesses. The type-II transition provides an important opportunity to utilize visible light emission and absorption for various optical and energy harvesting devices using the ZnO/ZnS material system.

中文翻译：

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通过原子层沉积生长的 II 型 ZnO/ZnS 多量子阱的光学表征

摘要 ZnO/ZnS多量子阱（MQWs）通过原子层沉积在Si衬底上生长，并研究了它们的光学性能。观察到远低于组成材料的带间跃迁能的光发射，这归因于 ZnO/ZnS MQW 的 II 型带排列。II 型跃迁随着激发功率的增加显示出显着的蓝移，这是由于电子和空穴的空间分离引起的改性带弯曲，因为电子被限制在 ZnO 导带量子阱中，而空穴被限制在 ZnS 价带量子中出色地。ZnO/ZnS 异质结的导带偏移被确定为 1.58 eV，模拟来自具有受控层厚度的 MQW 的 II 型发射。