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Layer‐Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2019-12-05 , DOI: 10.1002/aelm.201901020
Weihao Wang 1 , Tao Zhang 1 , Aleksandr Seliverstov 2 , Huihui Zhang 2, 3 , Yichen Wang 1 , Fengzhi Wang 1 , Xiaoli Peng 1 , Qiaoqi Lu 1 , Chao Qin 1 , Xinhua Pan 1 , Yu‐Jia Zeng 3 , Chris Van Haesendonck 2 , Zhizhen Ye 1
Affiliation  

Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D‐layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few‐layer SnS‐based field‐effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec−1, and a field effect mobility (µFE) of 1.48 cm2 V−1 s−1 in a 14‐monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near‐infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W−1 and rapid response constants of 60 ms for grow‐time constant τg and 10 ms for decay‐time constant τd under extremely weak 365 nm illumination. This study sheds light on layer‐dependent optoelectronic properties of 2D SnS that promise to be important in next‐generation 2D optoelectronic devices.

中文翻译:

脉冲激光沉积生长的二维范德华SnS的层相关光电特性

分层金属单硫属元素化物在二维族中引起了极大的兴趣,因为它们显示出与大体积对应物不同的独特特性。报道了通过脉冲激光沉积生长的二维层状单硫化锡(SnS)的综合合成,表征和光电应用。在Si / SiO 2衬底上制造了很少的基于SnS的场效应晶体管(FET)和光电探测器。优质的2D SnS FET的通/断比为3.41×10 6,亚阈值摆幅为180 mV dec -1,场效应迁移率(µ FE)为1.48 cm 2 V -1 s -1在14个单层SnS器件中。分层的SnS光电探测器显示出从紫外线到近红外(365-820 nm)的宽广的光响应。此外,光电晶体管的SnS呈现的9.78×10一种改进的探测灵敏度10厘米2赫兹1/2 w ^ -1的60毫秒养成时间常数和快速响应常数τ和10毫秒为衰减时间常数τ d下极365 nm弱照明。这项研究揭示了二维SnS依赖于层的光电特性,该特性有望在下一代2D光电器件中发挥重要作用。
更新日期:2020-03-09
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