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Direct bonding of high dielectric oxides for high-performance transistor applications
Scripta Materialia ( IF 6 ) Pub Date : 2020-03-01 , DOI: 10.1016/j.scriptamat.2019.11.055
Jikai Xu , Chenxi Wang , Xiaoliang Ji , Qi An , Yanhong Tian , Tadatomo Suga

Abstract We developed a plasma activation process using a gas mixture of O2/NH3/H2O for direct bonding, which realized the combination of bulk aluminum oxide (Al2O3) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time. The bonding could withstand multiple mechanical grinding and polishing processes and exhibited sufficient bonding strength for device micro/nanofabication. A nanoscale, sharp, and layered crystalline bonding interface with fewer grain boundaries was confirmed by transmission electron microscopy. The interfacial structure is well-suited for superior performance in high dielectric constant metal–oxide–semiconductor field-effect transistors. Moreover, this bonding method is universal for the fabrication of Al2O3/SiO2 and YSZ/SiO2 heterostructures.

中文翻译:

用于高性能晶体管应用的高介电氧化物的直接键合

摘要 我们开发了一种使用 O2/NH3/H2O 的气体混合物进行直接键合的等离子体活化工艺,首次实现了块状氧化铝 (Al2O3) 和氧化钇稳定的立方氧化锆 (YSZ) 的无夹层结合。该键合可以承受多次机械研磨和抛光过程,并为器件微/纳米制造表现出足够的键合强度。透射电子显微镜证实了具有较少晶界的纳米级、尖锐和层状晶体键合界面。这种界面结构非常适合高介电常数金属-氧化物-半导体场效应晶体管的卓越性能。此外,这种键合方法对于制造 Al2O3/SiO2 和 YSZ/SiO2 异质结构是通用的。
更新日期:2020-03-01
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