Abstract The charge transportation in nanostructured SnS thin film solar cells was studied with an emphasis on the band alignments and charge space limited current (SCLC) behavior. SnS nanostructures were synthesized using the co-precipitation method and deposited as a form of thin films using ethyl cellulose. The effect of deposition parameters including annealing temperature and film thickness were investigated on the role of mentioned properties. Primary characterizations show the formation of polycrystalline orthorhombic SnS nanostructures with rod-like morphology. Optical studies showed an increase in annealing temperature and thickness resulted in an increase and decrease in the optical energy band gap of absorber layers, respectively. Electrical measurements revealed the dominating effect of TiO2/SnS interface compared to the SnS/Ag interface when annealing temperature was increased. Also, increasing the annealing temperature and absorber film thickness enhanced and reduced the ideality factor (n) and mobility (μ) of devices related to the crystalline features, respectively.

中文翻译：

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TiO2/SnS/Ag 太阳能电池中的电荷传输机制

摘要 研究了纳米结构 SnS 薄膜太阳能电池中的电荷传输，重点是能带排列和电荷空间限制电流 (SCLC) 行为。使用共沉淀法合成 SnS 纳米结构并使用乙基纤维素沉积为薄膜形式。研究了包括退火温度和薄膜厚度在内的沉积参数对上述特性的影响。初步表征显示了具有棒状形态的多晶正交 SnS 纳米结构的形成。光学研究表明，退火温度和厚度的增加分别导致吸收层光能带隙的增加和减少。电气测量显示，当退火温度升高时，与 SnS/Ag 界面相比，TiO2/SnS 界面的主导作用。此外，增加退火温度和吸收膜厚度分别增强和降低了与晶体特征相关的器件的理想因子 (n) 和迁移率 (μ)。