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High-Density Power Conversion and Wide-Bandgap Semiconductor Power Electronics Switching Devices
Proceedings of the IEEE ( IF 20.6 ) Pub Date : 2019-12-01 , DOI: 10.1109/jproc.2019.2948554
Krishna Shenai

Power electronics switching devices made on wide-bandgap (WBG) semiconductors are known to have the potential to make a transformative impact on 21st century energy economy. However, their market penetration has been slow primarily due to high cost and unknown application-level reliability. This article presents a comprehensive report on the history, current state of the art, and impending challenges in WBG power semiconductor technologies in order to break open this gridlock.

中文翻译:

高密度电源转换和宽带隙半导体电力电子开关器件

众所周知,基于宽带隙 (WBG) 半导体制造的电力电子开关器件有可能对 21 世纪的能源经济产生变革性影响。然而,它们的市场渗透一直缓慢,主要是由于成本高和应用级可靠性未知。本文提供了一份关于 WBG 功率半导体技术的历史、当前技术状态和即将面临的挑战的综合报告,以打破这一僵局。
更新日期:2019-12-01
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