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Subcycle Nonlinear Response of Doped 4H Silicon Carbide Revealed by Two-Dimensional Terahertz Spectroscopy
ACS Photonics ( IF 7 ) Pub Date : 2019-12-13 , DOI: 10.1021/acsphotonics.9b01462
Abebe T. Tarekegne 1 , Korbinian J. Kaltenecker 1 , Pernille Klarskov 2 , Krzysztof Iwaszczuk 1, 3 , Weifang Lu 1 , Haiyan Ou 1 , Kion Norrman 4 , Peter U. Jepsen 1
Affiliation  

We investigate single-cycle terahertz (THz) field-induced nonlinear absorption in doped silicon carbide. We find that the nonlinear response is ultrafast, and we observe up to 20% reduction of transmission of single THz pulses at peak field strengths of 280 kV/cm. We model the field and temperature dependence of the nonlinear response by a finite-difference time-domain simulation that incorporates the temporally nonlocal nonlinear conductivity of the silicon carbide. Nonlinear two-dimensional THz spectroscopy reveals that the nonlinear absorption has an ultrafast subpicosecond recovery time, with contributions from both sum-frequency generation and four-wave mixing, in the form of a photon-echo signal. The ultrafast nonlinearity with its equally fast recovery time makes silicon carbide an interesting candidate material for extremely fast nonlinear THz modulators.

中文翻译:

二维太赫兹光谱揭示掺杂的4 H碳化硅的子循环非线性响应

我们研究了掺杂碳化硅中单周期太赫兹(THz)场诱导的非线性吸收。我们发现非线性响应是超快的,并且在280 kV / cm的峰值场强下,我们观察到单个THz脉冲的传输降低了20%。我们通过有限差分时域仿真对非线性响应的场和温度依赖性进行建模,该时域仿真结合了碳化硅的时间非局部非线性电导率。非线性二维太赫兹光谱显示,非线性吸收具有超快的皮秒恢复时间,归因于和频产生和四波混合,以光子回波信号的形式产生。
更新日期:2019-12-17
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