The photodiode is a promising architecture for photodetection because of its fast response and high external quantum efficiency (EQE). The photodiode requires high detectivity, responsivity, and low dark current for various applications. Here, a new structure of quantum‐dots (QD) photodiode is reported for ultraviolet (UV), blue, green, and red light sensing using a red QD layer between p‐type and n‐type metal‐oxide semiconductors. CdZnSeS/ZnS QD is used for photoabsorption with p‐type Cu₂SnS₃–Ga₂O₃ and n‐type Li doped ZnO (LZO) for carrier collection. The QD photodiode has a low dark current density of 2.08 nA cm⁻² at −1 V leading to high rectification ratio of ≈10⁵. The QD photodiode shows superior properties with responsivity of 0.258 A W⁻¹ and detectivity of 1.00 × 10¹³ Jones at −1 V under green illumination. The rise and fall times of QD photodiode are 2.1 and 2.6 ms, respectively. The QD photodiode on a flexible polyimide (PI) substrate is also demonstrated, exhibiting stable characteristics under bending test of 20 000 cycles at a bending radius of 0.32 mm.

中文翻译：

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具有宽带隙P型和N型氧化物半导体的量子点光电传感器可实现高检测率和高响应度

光电二极管因其快速响应和高外部量子效率（EQE）而成为一种有前途的光电检测架构。对于各种应用，光电二极管需要高检测率，响应度和低暗电流。在这里，据报道，使用在p型和n型金属氧化物半导体之间的红色QD层，可以对紫外线（UV），蓝色，绿色和红色光进行感应的量子点（QD）光电二极管的新结构。CdZnSeS / ZnS QD用于与p型Cu ₂ SnS ₃ -Ga ₂ O ₃和n型掺杂Li的ZnO（LZO）进行光吸收，以进行载流子收集。QD光电二极管在-1 V时具有2.08 nA cm ^-2的低暗电流密度，从而导致约^{10 5的}高整流比。。在绿色照明下，QD光电二极管在-1 V时的响应度为0.258 AW ^-1，检测率为1.00×10 ¹³ Jones，具有优越的性能。QD光电二极管的上升和下降时间分别为2.1 ms和2.6 ms。还展示了柔性聚酰亚胺（PI）衬底上的QD光电二极管，在20000次弯曲试验下，在0.32 mm的弯曲半径下表现出稳定的特性。