It is generally believed that the photoresponse behavior of organic field-effect transistors (OFETs) reflects the intrinsic property of organic semiconductors. However, this photoresponse hinders the application of OFETs in transparent displays as driven circuits due to the current instability resulting from the threshold voltage shift under light illumination. It is necessary to relieve the photosensitivity of OFETs to keep the devices stable. 2,6-diphenyl anthracene thin-film and single-crystal OFETs are fabricated on different substrates, and it is found that the degree of molecular order in the conducting channels and the defects at the dielectric/semiconductor interface play important roles in determining the phototransistor performance. When highly ordered single-crystal OFETs are fabricated on polymeric substrates with low defects, the photosensitivity (P) decreases by more than 105 times and the threshold voltage shift (ΔVT ) is almost eliminated compared with the corresponding thin-film OFETs. This phenomenon is further verified by using another three organic semiconductors for similar characterizations. The decreased P and ΔVT of OFETs ensure a good current stability for OFETs to drive organic light-emitting diodes efficiently, which is essential to the application of OFETs in flexible and transparent displays.

中文翻译：

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减轻有机场效应晶体管的光敏性。

通常认为有机场效应晶体管（OFET）的光响应行为反映了有机半导体的固有特性。然而，由于在光照下阈值电压偏移引起的电流不稳定性，这种光响应阻碍了OFET在作为驱动电路的透明显示器中的应用。必须减轻OFET的光敏性以保持设备稳定。在不同的衬底上制备了2,6-二苯基蒽薄膜和单晶OFETs，发现导电沟道中的分子有序度和介电/半导体界面处的缺陷在确定光电晶体管中起着重要作用表现。当在低缺陷的聚合物基材上制备高度有序的单晶OFET时，与相应的薄膜OFET相比，光敏性（P）降低了105倍以上，并且几乎消除了阈值电压漂移（ΔVT）。通过使用另外三种有机半导体进行相似的表征，可以进一步验证这种现象。OFET的P和ΔVT的减小确保OFET具有良好的电流稳定性，以有效地驱动有机发光二极管，这对于在透明且透明的显示器中应用OFET是必不可少的。