Ion migration has been regarded as one of the most interesting and mysterious processes in halide‐perovskite‐based electronic devices. On the one hand, ion migration contributes to the hysteresis and poor stability problems of perovskite devices. On the other hand, the mobile ions can passivate the interfaces of perovskite devices, leading to improved carrier transportation and collection. This article gives a critical review on the ion migration in halide perovskite materials. It starts with a brief introduction of the origin and nature of the ion migration problem in perovskite materials. Next, the electric, photoelectric, and structural phenomena resulting from ion migration and their influence on the performance and stability of the perovskite devices are focused on. The recent literature work on the characterization of ion migration is reviewed and the characterization techniques are highlighted. Furthermore, different approaches that can suppress the ion migration process are also introduced. Finally, ion migration in the emerging all‐inorganic halide perovskite materials is compared with that in hybrid halide perovskite materials, and the implications on device design and performance are discussed.

中文翻译：

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离子迁移：基于卤化物-钙钛矿的电子设备的“双刃剑”

在基于卤化钙钛矿的电子设备中，离子迁移被认为是最有趣和最神秘的过程之一。一方面，离子迁移导致钙钛矿装置的滞后和稳定性差的问题。另一方面，移动离子可以钝化钙钛矿设备的界面，从而改善了载流子的运输和收集。本文对卤化物钙钛矿材料中的离子迁移进行了严格的综述。首先简要介绍钙钛矿材料中离子迁移问题的来源和性质。接下来，将重点讨论由离子迁移产生的电，光电和结构现象及其对钙钛矿器件性能和稳定性的影响。综述了有关离子迁移表征的最新文献，并重点介绍了表征技术。此外，还介绍了可以抑制离子迁移过程的不同方法。最后，将新兴的全无机卤化物钙钛矿材料中的离子迁移与杂化卤化物钙钛矿材料中的离子迁移进行了比较，并讨论了其对器件设计和性能的影响。