当前位置: X-MOL 学术Adv. Opt. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Smart Wide‐Bandgap Omnidirectional Reflector as an Effective Hole‐Injection Electrode for Deep‐UV Light‐Emitting Diodes
Advanced Optical Materials ( IF 9 ) Pub Date : 2019-11-26 , DOI: 10.1002/adom.201901430
Tae Ho Lee 1 , Tae Hoon Park 1 , Hee Woong Shin 1, 2 , Noritoshi Maeda 3 , Masafumi Jo 3 , Hideki Hirayama 3 , Bo‐Hyun Kim 1 , Tae Geun Kim 1
Affiliation  

Deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) find widespread applications in various industries and are a focus area in environmental and life science research. However, the quantum efficiency of DUV‐LEDs is still low because of the unbalanced hole injection, high operation voltage, and low reflectivity of the p‐electrode. In this study, a smart wide‐bandgap omnidirectional reflector (ODR), which simultaneously acts as an effective hole‐injection electrode, is demonstrated for a flip‐chip DUV‐LED. The smart ODR is composed of p‐type AlGaN (p‐AlGaN)/Ni:AlN/Al with a high reflectivity of 94.2% at 280 nm, in which AlN with a theoretically calculated thickness of 40 nm is Ni‐doped using the pulsed electrical breakdown (PEBD) method. The smart ODR‐mounted AlGaN‐multiquantum‐well‐based DUV‐LED exhibits a remarkable wall‐plug efficiency (4.8%) and high external quantum efficiency (8.5%) at a low operation voltage of 9.75 V owing to the fused layer of Ni3N and Ga vacancies formed in the interfacial region of the p‐AlGaN and AlN layers, through the mutual diffusion of Ni and Ga during PEBD. The interface‐mediated Ohmic contact leads to an effective hole injection without reducing the reflectivity, yielding increased optical output and electric input powers. The proposed smart ODR can provide an innovative route for the manipulation of DUV light.

中文翻译:

智能宽带隙全向反射器,可作为深紫外发光二极管的有效空穴注入电极

深紫外发光二极管(DUV-LED)在各个行业中都有广泛的应用,并且是环境和生命科学研究的重点领域。但是,由于空穴注入不平衡,工作电压高以及p电极的反射率低,DUV-LED的量子效率仍然很低。在这项研究中,针对倒装芯片DUV-LED演示了一种智能宽带隙全向反射器(ODR),该反射器同时用作有效的空穴注入电极。智能ODR由p型AlGaN(p-AlGaN)/ Ni:AlN / Al组成,在280 nm处具有94.2%的高反射率,其中理论计算厚度为40 nm的AlN使用脉冲掺杂电击穿(PEBD)方法。基于ODR的智能AlGaN多量子阱DUV-LED具有出色的墙插效率(4。通过PEBD期间Ni和Ga的相互扩散,在p-AlGaN和AlN层的界面区域中形成了3个N和Ga空位。通过界面介导的欧姆接触可在不降低反射率的情况下进行有效的空穴注入,从而增加光输出和电输入功率。提出的智能ODR可以为DUV光的操纵提供创新的途径。
更新日期:2020-01-17
down
wechat
bug