Abstract P-type conductivity enhancement of cuprous oxide Cu2O films covered with sodium chloride (NaCl) nano-layer using the reactive annealing method is reported in the present study. Effects of the NaCl nano-layer on the surface morphology, structural characteristics, and electrical properties of the material are discussed. Changes in the surface morphology and chemical composition of Cu2O films produced by the annealing process were studied by scanning electron microscopy and energy dispersive spectroscopy analysis, respectively. The structure of the Cu2O film was studied by x-ray diffraction analysis and Raman spectroscopy. The Raman results demonstrate the reduction of the cupric oxide CuO phase formed above the Cu2O layer by natural progressive oxidation. After performing the reactive annealing process, electrical resistivity decreased from 900 to 90 Ω cm due to the incorporation of sodium into the Cu2O lattice. An increase in carrier mobility was observed with respect to the as-grown Cu2O films, which may be attributed to the decrease in structural defects. A discussion on the stability of Cu2O in comparison to the CuO phase when copper oxide films are covered with a NaCl nano-layer is also provided.

中文翻译：

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通过在低氧气氛中对覆盖有 NaCl 纳米膜的 Cu2O 进行反应退火来对 Cu2O 层进行钠掺杂

摘要 本研究报道了使用反应退火方法增强氯化钠 (NaCl) 纳米层覆盖的氧化亚铜 Cu2O 薄膜的 P 型电导率。讨论了NaCl纳米层对材料表面形貌、结构特征和电学性能的影响。分别通过扫描电子显微镜和能量色散光谱分析研究了退火过程产生的 Cu2O 薄膜的表面形貌和化学成分的变化。通过X射线衍射分析和拉曼光谱研究了Cu2O膜的结构。拉曼结果表明通过自然渐进氧化在 Cu2O 层上方形成的氧化铜 CuO 相被还原。进行反应性退火工艺后，由于钠掺入到 Cu2O 晶格中，电阻率从 900 Ω cm 降低到 90 Ω cm。观察到与生长的 Cu2O 膜相关的载流子迁移率增加，这可能归因于结构缺陷的减少。还讨论了当氧化铜膜覆盖有 NaCl 纳米层时，与 CuO 相相比，Cu2O 的稳定性。