Abstract The chemical-vapor-deposition of photosensitive hydrogenated-microcrystalline-silicon (µc-Si:H) thin films with -preferential orientation was optimized by altering the concentration of hydrogen within a high-density hollow-anode plasma. The µc-Si:H thin films were grown using a ratio of hydrogen (H2) to monosilane (SiH4) in the range of 1.25 ≤ [H2]/[SiH4] ≤ 35, with a gas pressure of 80 Pa. The high-density hollow-anode plasma was excited remotely in a processing space by transferring a hollow-cathode plasma via a nozzle on a partition plate, which separated the processing space from a hollow-cathode discharge space and served as an anode in an ultra-high vacuum hollow-electrode-enhanced glow-plasma transportation (HEEPT) system. The hollow-cathode plasma was excited by applying very-high-frequency (VHF, 105 MHz) power to a cathode in the hollow-cathode discharge space. The growth rate, crystalline volume fraction, and -preferential crystal orientation of the films exhibited almost linear correlations with the ratio of the optical emission intensities of hydrogen atoms (Hα: 656 nm) and monosilane radicals (SiH*: 414 nm) (i.e. HαI/SiH*I). Reducing the [H2]/[SiH4] ratio by decreasing [H2] improved the growth rate, crystalline volume fraction, and -preferential crystal orientation of the films. These results indicated that lower concentration of H2 was optimal for the fast deposition of photosensitive µc-Si:H thin-films with -preferential crystal orientation using the HEEPT system. The -preferential crystal orientation was less dependent on the VHF power, whereas the growth rate and crystalline volume fraction increased as the VHF power was increased. This result suggested that there would be a room for faster growth with retaining -preferential crystal orientation.

中文翻译：

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用于光敏和优先微晶硅薄膜的快速化学气相沉积的远程诱导空心阳极等离子体中的优化氢浓度

摘要 通过改变高密度空心阳极等离子体中的氢浓度，优化了具有优先取向的光敏氢化微晶硅 (μc-Si:H) 薄膜的化学气相沉积。µc-Si:H 薄膜是使用氢气 (H2) 与甲硅烷 (SiH4) 的比率在 1.25 ≤ [H2]/[SiH4] ≤ 35 范围内生长的，气体压力为 80 Pa。通过隔板上的喷嘴传输空心阴极等离子体，在处理空间中远程激发密度空心阳极等离子体，将处理空间与空心阴极放电空间隔开，并在超高真空中用作阳极空心电极增强辉光等离子体传输（HEEPT）系统。空心阴极等离子体通过施加甚高频（VHF，105 MHz) 为空心阴极放电空间中的阴极供电。薄膜的生长速率、晶体体积分数和优先晶体取向与氢原子（Hα：656 nm）和甲硅烷自由基（SiH*：414 nm）（即 HαI）的光发射强度之比几乎呈线性相关。 /SiH*I)。通过降低 [H2] 来降低 [H2]/[SiH4] 比率，可以提高薄膜的生长速率、晶体体积分数和优先晶体取向。这些结果表明，较低浓度的 H2 是使用 HEEPT 系统快速沉积具有优先晶体取向的光敏 μc-Si:H 薄膜的最佳选择。优先晶体取向对 VHF 功率的依赖性较小，而生长速率和晶体体积分数随着 VHF 功率的增加而增加。该结果表明，在保留优先晶体取向的情况下，会有更快的生长空间。