Abstract The excellent electrical properties of graphene make it have broad application in electronic devices [1–2]. Grain boundaries and wrinkles will greatly scatter charge carriers of graphene [3–4]. Graphene with less gain boundaries and wrinkles are highly demanded. At present, the chemical vapor deposition (CVD) of graphene on Cu foil/Cu-Ni surfaces has been known as the simplicity and low cost way to prepare large-sized high-quality graphene films. However, the suppressing nucleation density method also leads to a low growth rate. Here we demonstrate a surface oxygen supply strategy for the Cu Ni substrate on sapphire to form a Cu-Ni-O surface. With the Cu-Ni-O surface, the growth rate of graphene is greatly increased to 240 μm/min. The as-synthesized graphene has less wrinkles, and a small 2D peaks FWHM of 25.2 cm−1. The room temperature sheet resistance reaches 267 Ω/square. This study provides a meaningful method to time-saving synthesis of high-quality graphene.

中文翻译：

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表面供氧在铜镍衬底上快速生长单晶石墨烯

摘要 石墨烯优异的电学性能使其在电子器件中有着广泛的应用[1-2]。晶界和皱纹会极大地散射石墨烯的电荷载流子 [3-4]。非常需要具有较少增益边界和皱纹的石墨烯。目前，在铜箔/铜镍表面上化学气相沉积（CVD）石墨烯被认为是制备大尺寸高质量石墨烯薄膜的简单且低成本的方法。然而，抑制成核密度的方法也导致低生长速率。在这里，我们展示了蓝宝石上的 Cu Ni 衬底的表面供氧策略，以形成 Cu-Ni-O 表面。有了Cu-Ni-O表面，石墨烯的生长速度大大提高到240μm/min。合成后的石墨烯皱纹较少，25.2 cm-1 的小 2D 峰 FWHM。室温薄层电阻达到 267 Ω/平方。该研究为节省时间合成高质量石墨烯提供了一种有意义的方法。