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Automated Growth of Si1−xGex Single Crystals with Constant Axial Gradient by Czochralski Technique
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2019-11-19 , DOI: 10.1002/crat.201900097
Nikolay V. Abrosimov 1 , Vladimir N. Kurlov 2 , Robert Schewski 1 , Jan Winkler 3
Affiliation  

This contribution presents the growth of Si1−xGex crystals with constant gradient of composition for X‐ray or γ‐ray diffraction optics using automated control of the crystal shape during the growth process. The key idea is to achieve a constant concentration gradient by continuously decreasing the crystal diameter during the main crystal growth phase. For this purpose a concept has been developed for a proper planning of the radius trajectory matching all technological requirements. Si1−xGex single crystals with constant gradients between 0.10 and 0.16 at% cm−1 have been grown using an automated control system.

中文翻译:

通过直拉技术自动生长具有恒定轴向梯度的Si1-xGex单晶

这一贡献表明,在生长过程中,通过自动控制晶体形状,X-射线或γ-射线衍射光学器件具有恒定的组成梯度的Si 1- x Ge x晶体生长。关键思想是通过在主晶体生长阶段连续减小晶体直径来获得恒定的浓度梯度。为此目的,已经提出了一种概念,以适当地规划与所有技术要求相匹配的半径轨迹。使用自动化控制系统已经生长出具有介于0.10和0.16 at%cm -1之间的恒定梯度的Si 1- x Ge x单晶。
更新日期:2020-02-12
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