Quantum‐level manipulation of atomic configuration offers a excellent platform for the construction of exotic nanostructures that exhibit unusual solid‐state physics and electronic properties. One particular example is the memristor, in which the elaborate evolution of atomic point contact via local ionic processes and consequent stepwise device conductance quantization enable bottom‐up design of in‐memory computing with greatly increased data storage density and more efficient multi‐value logic algorithm. In‐depth understanding on the physics of atomic reconfiguration is achieved through comprehensive consideration of the thermodynamics and kinetics of nanoionics in memristors, based on which a general protocol of constructing atomic point contact structure with desired quantized conductance is established. Through energy‐driven single‐atom level oxygen manipulation in the reset process of a Pt/HfO_x/ITO structure, up to 32 consecutive quantized conductance states with an interval of half conductance quantum that can be sustained for over 7000 s and tuned 500 times are demonstrated for the first time, not only allowing the physical implementation of ternary logic‐in‐memory functions, but also providing a universal methodology for building next‐generation quantum electronic devices.

中文翻译：

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Pt / HfOx / ITO忆阻器中可控且稳定的量化电导状态

原子级配置的量子级操纵为异质纳米结构的构建提供了一个极好的平台，这些异质纳米结构表现出不同寻常的固态物理和电子特性。忆阻器就是一个特别的例子，其中通过局部离子过程对原子点接触进行了精心的演化，并随之实现了逐步的设备电导量化，从而实现了内存计算的自下而上设计，从而大大提高了数据存储密度并提高了多值逻辑算法的效率。 。通过全面考虑忆阻器中纳米离子的热力学和动力学，可以对原子重构的物理学有深入的了解，在此基础上，建立了构建具有所需量化电导的原子点接触结构的通用协议。_x / ITO结构，首次展示了多达32个连续的量化电导状态，间隔为半电导量子，可以持续7000 s以上，并调谐500次，不仅允许物理实现三元逻辑输入存储器功能，还提供了构建下一代量子电子设备的通用方法。