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III‐V//Si multijunction solar cells with 30% efficiency using smart stack technology with Pd nanoparticle array
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2019-11-17 , DOI: 10.1002/pip.3200
Kikuo Makita 1 , Hidenori Mizuno 1 , Takeshi Tayagaki 1 , Taketo Aihara 1 , Ryuji Oshima 1 , Yasushi Shoji 1 , Hitoshi Sai 1 , Hidetaka Takato 1 , Ralph Müller 2 , Paul Beutel 2 , David Lackner 2 , Jan Benick 2 , Martin Hermle 2 , Frank Dimroth 2 , Takeyoshi Sugaya 1
Affiliation  

Multijunction (MJ) solar cells achieve very high efficiencies by effectively utilizing the entire solar spectrum. Previously, we constructed a III‐V//Si MJ solar cell using the smart stack technology, a unique mechanical stacking technology with Pd nanoparticle array. In this study, we fabricated an InGaP/AlGaAs//Si three‐junction solar cell with an efficiency of 30.8% under AM 1.5G solar spectrum illumination. This efficiency is considerably higher than our previous result (25.1%). The superior performance was achieved by optimizing the structure of the upper GaAs‐based cell and employing a tunnel oxide passivated contact Si cell. Furthermore, we examined the low solar concentration performance of the device and obtained a maximum efficiency of 32.6% at 5.5 suns. This performance is sufficient for realistic low concentration photovoltaic applications (below 10 suns). In addition, we characterize the reliability of the InGaP/AlGaAs//Si three‐junction solar cell with a damp heat test (85 °C and 85% humidity for 1000 h). It was confirmed that our solar cells have high long‐term stability under severe conditions. The results demonstrate the potential of GaAs//Si MJ solar cells as next‐generation photovoltaic cells and the effectiveness of smart stack technology in fabricating multijunction cells.

中文翻译:

III-V // Si多结太阳能电池使用智能堆技术和Pd纳米颗粒阵列可实现30%的效率

多结(MJ)太阳能电池通过有效利用整个太阳光谱实现了非常高的效率。以前,我们使用智能堆栈技术(一种具有Pd纳米粒子阵列的独特机械堆栈技术)构造了III-V // Si MJ太阳能电池。在这项研究中,我们制造了一个InGaP / AlGaAs // Si三结太阳能电池,在AM 1.5G太阳光谱照明下的效率为30.8%。该效率大大高于我们之前的结果(25.1%)。通过优化上部GaAs基电池的结构并采用隧道氧化物钝化的接触式Si电池,可实现卓越的性能。此外,我们检查了该器件的低日照集中性能,并在5.5太阳下获得了32.6%的最大效率。该性能足以满足实际的低浓度光伏应用(低于10个太阳)的要求。此外,我们通过湿热测试(85°C和85%湿度持续1000 h)来表征InGaP / AlGaAs // Si三结太阳能电池的可靠性。可以肯定的是,我们的太阳能电池在恶劣的条件下具有很高的长期稳定性。结果证明了GaAs // Si MJ太阳能电池作为下一代光伏电池的潜力以及智能堆叠技术在制造多结电池中的有效性。
更新日期:2019-11-17
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