Abstract Self-powered pn-juncted devices fabricated with pyroelectric semiconductor have attached much attention as active ultraviolet (UV) photodetectors (PDs), featuring with energy-efficient, active functionality and ultrafast response speed. Herein, the pyroelectric ZnO nanowires (NWs) grown on p-Si are functioned as a self-powered UV PD. Without an external voltage, the fabricated device exhibits a stable and uniform UV sensing ability with high photoresponsivity and fast response and decay time. Furthermore, the effects of ambient temperature on the self-powered UV PD are systematically investigated. Under the temperature of 77 K, the current response of the UV PD is significantly improved by over 1304%, while it is only increased by 532.6% at RT. Under the temperatures above RT, the UV PD functions well in a self-powering and stable manner even the temperature is elevated to 85 °C from RT, exhibiting good photoresponsivity of 17.0 mA/W and fast response time of 700 μs at the rise edge. By analyzing energy diagrams of the pn junction, the underlying physical mechanism of the self-powered UV PDs is carefully illustrated. This study provides guiding significance for research of high-performances UV sensing and ultrafast optoelectronic communication.

中文翻译：

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自供电 p-Si/n-ZnO 纳米线异质结紫外传感器中热光电效应的温度依赖性

摘要 由热释电半导体制成的自供电 pn 结器件作为有源紫外 (UV) 光电探测器 (PD) 备受关注，其具有节能、有源功能和超快响应速度的特点。在此，在 p-Si 上生长的热电 ZnO 纳米线 (NW) 用作自供电 UV PD。在没有外部电压的情况下，所制造的器件表现出稳定且均匀的紫外线传感能力，具有高光响应性和快速响应和衰减时间。此外，系统地研究了环境温度对自供电 UV PD 的影响。在 77 K 温度下，UV PD 的电流响应显着提高了 1304% 以上，而在 RT 下仅提高了 532.6%。在室温以上的温度下，即使温度从 RT 升高到 85°C，UV PD 也能以自供电和稳定的方式良好运行，表现出 17.0 mA/W 的良好光响应性和上升沿 700 μs 的快速响应时间。通过分析 pn 结的能量图，仔细说明了自供电 UV PD 的潜在物理机制。该研究对高性能紫外传感和超快光电通信的研究具有指导意义。