The mechanism for modulating the effective Schottky barrier height of NiGe/Ge contacts by incorporating impurities is still under debate. There is a view that impurities segregated at the NiGe/Ge interface act as donors or passivators that alleviate the Fermi-level pinning effect so as to significantly affect the electrical characteristics. Our study, however, clearly demonstrates that ion implantation damage is the primary factor in causing the lowering of the effective Schottky barrier, for NiGe/n-Ge contacts doped with Se or Si, although passivation behavior is observed for P doping.

中文翻译：

---

离子注入对NiGe / n-Ge接触有效肖特基势垒高度的影响

通过掺入杂质来调节NiGe / Ge接触的有效肖特基势垒高度的机制仍在争论中。有观点认为，在NiGe / Ge界面处偏析的杂质充当了供体或钝化剂，从而减轻了费米能级的钉扎效应，从而显着影响了电学特性。然而，我们的研究清楚地表明，对于掺有Se或Si的NiGe / n-Ge触点，离子注入损伤是引起有效肖特基势垒降低的主要因素，尽管P掺杂观察到了钝化行为。