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Ferromagnetic properties of MoS2 film doped by Fe using chemical vapor deposition
Solid State Communications ( IF 2.1 ) Pub Date : 2020-02-01 , DOI: 10.1016/j.ssc.2019.113776
Chang-Soo Park , Yoon Shon , Juwon Lee , Eun Kyu Kim

Abstract We have investigated the ferromagnetic properties of MoS2 thin film doped by iron using chemical vapour deposition. The structure of film was determined to be poly-crystalline with various phases. The iron doped MoS2 film shows that the ferromagnetic hysteresis appears at room temperature, and also indicated two Curie temperatures. The remnant magnetization and coercive field at room temperature are 36 emu/cm3 and 44 Oe. The elemental atomic concentration of iron doped MoS2 measured by x-ray photoelectron spectroscopy was 0.69 at.%.

中文翻译:

Fe掺杂的MoS2薄膜的铁磁特性化学气相沉积

摘要 我们使用化学气相沉积研究了铁掺杂的二硫化钼薄膜的铁磁性能。薄膜的结构被确定为具有不同相的多晶。铁掺杂的 MoS2 薄膜表明铁磁滞后出现在室温下,也表明了两个居里温度。室温下的剩余磁化强度和矫顽力为 36 emu/cm3 和 44 Oe。通过 X 射线光电子能谱测量的铁掺杂 MoS2 的元素原子浓度为 0.69 at.%。
更新日期:2020-02-01
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