Organic ternary resistive memory suffers from low device yield and wide writing voltage distribution and improvement through laborious molecular formula innovation is limited. Here, organic bulk heterojunction is employed as the active material in resistive random‐access memories (RRAMs). The ternary memory yield of the device reaches 58% when prepared by blending X55 (N2, 7‐bis(4‐methoxyphenyl)N2, N7‐bis (2‐spiro [fluorene‐9,9′‐oxanthracene]‐spiro[fluorene‐9,9′‐oxanthracene]‐2,7‐diamine) and PCBM (1‐(3‐methoxycarbonyl)propyl‐1‐phenyl[6,6]C61) with a 1:1 molar ratio, which is the highest yield among all prepared devices including pure X55, PCBM, or layer‐by‐layer stacking of X55 and PCBM. Furthermore, the mixture could be made on a flexible substrate and has sufficient toughness to sustain its memory performance after 5000 bending cycles or a bending angle of 62°. This work provokes new thinking about future material design and selection with donor–acceptor bulk heterojunction use in potential wearable RRAM devices.

中文翻译：

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有机体异质结的柔性三元电阻记忆

有机三元电阻式存储器的器件产量低，写入电压分布宽，并且通过费力的分子式创新来改进其进展是有限的。在这里，有机体异质结被用作电阻性随机存取存储器（RRAM）中的活性材料。通过混合X55（N2，7-双（4-甲氧基苯基）N2，N7-bis（2-螺[芴-9,9'-恶蒽]]-螺[芴] 9,9'-恶蒽] -2,7-二胺）和PCBM（1-（3-3-甲氧羰基）丙基-1-苯基[6,6] C61）的摩尔比为1：1，是最高的收率所有准备好的设备，包括纯X55，PCBM或X55和PCBM的逐层堆叠。该混合物可以在挠性基材上制成，并且具有足够的韧性以在5000个弯曲周期或62°弯曲角度后保持其记忆性能。这项工作激发了有关未来材料设计和选择的新思路，供体-受体体异质结在潜在的可穿戴RRAM器件中使用。