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For none, one, or two polarities—How do POLO junctions fit best into industrial Si solar cells?
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2019-11-05 , DOI: 10.1002/pip.3201
Robby Peibst 1, 2 , Christian Kruse 1 , Sören Schäfer 1 , Verena Mertens 1 , Stefan Bordihn 1 , Thorsten Dullweber 1 , Felix Haase 1 , Christina Hollemann 1 , Bianca Lim 1 , Byungsul Min 1 , Raphael Niepelt 1 , Henning Schulte‐Huxel 1 , Rolf Brendel 1, 3
Affiliation  

We present a systematic study on the benefit of the implementation of poly‐Si on oxide (POLO) or related junctions into p‐type industrial Si solar cells as compared with the benchmark of Passivated Emitter and Rear Cell (PERC). We assess three aspects: (a) the simulated efficiency potential of representative structures with POLO junctions for none (=PERC+), one, and for two polarities; (b) possible lean process flows for their fabrication; and (c) experimental results on major building blocks. Synergistic efficiency gain analysis reveals that the exclusive suppression of the contact recombination for one polarity by POLO only yields moderate efficiency improvements between 0.23%abs and 0.41%abs as compared with PERC+ because of the remaining recombination paths. This problem is solved in a structure that includes POLO junctions for both polarities (POLO2), for whose realization we propose a lean process flow, and for which we experimentally demonstrate the most important building blocks. However, two experimental challenges—alignment tolerances and screen‐print metallization of p+ poly‐Si—are unsolved so far and reduced the efficiency of the “real” POLO2 cell as compared with an idealized scenario. As an intermediate step, we therefore work on a POLO IBC cell with POLO junctions for one polarity. It avoids the abovementioned challenges of the POLO2 structure, can be realized within a lean process flow, and has an efficiency benefit of 1.59%abs as compared with PERC—because not only contact recombination is suppressed but also the entire phosphorus emitter is replaced by an n+ POLO junction.

中文翻译:

对于无极性,无极性或无极性-POLO结如何最适合工业Si太阳能电池?

与钝化发射极和后电池(PERC)的基准相比,我们对p型工业Si太阳能电池上的氧化物上的多晶硅(POLO)或相关结的实施带来的好处进行了系统的研究。我们评估了三个方面:(a)具有POLO结的代表性结构对无极性(= PERC +),一种极性和两种极性的模拟效率潜力;(b)可能的精益生产流程;(c)在主要组成部分上的实验结果。协同效率增益分析显示,POLO对一种极性的接触重组的排他性抑制仅能在0.23%abs和0.41%abs之间产生适度的效率改善与PERC +相比,由于剩余的重组途径。在包括两个极性的POLO结(POLO 2)的结构中解决了该问题,为此,我们提出了一种精益的工艺流程,并通过实验证明了最重要的构建基块。但是,与理想方案相比,到目前为止尚没有解决两个实验挑战,即对准公差和p +多晶硅的丝网印刷金属化,并降低了“实际” POLO 2电池的效率。因此,作为中间步骤,我们研究了具有POLO结的POLO IBC电池的一种极性。它避免了POLO 2结构的上述挑战,可以在精益工艺流程中实现,并具有1.59%的效率优势与PERC相比,abs更高-因为不仅抑制了触点重组,而且整个磷发射极都被n + POLO结取代。
更新日期:2019-11-05
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