The recent development of semiconductor crystal growth focusses on increase of process efficiency and simultaneous improvement of crystal quality. For improved crystal quality, an exact and permanent control of the melt flow is a crucial parameter. To achieve larger crystals, the melt volume must be increased markedly resulting in disadvantageously changed melt convection. In the case of Czochralski growth, the flow can even become turbulent. This changed flow can disturb the single crystal growth and may give rise to dopant inhomogeneities within the crystal. To effectively influence melt flow and hence to improve growth conditions, magnetic fields can be applied. Mostly, steady magnetic fields (SMF) are applied in industrial scale to damp melt flow oscillations. However, compared to SMF the application of non‐SMF proves to be also very promising since significantly lower induction causes similar effects in the melt. An overview on magnetic field features with the focus on achievable results under the influence of traveling magnetic fields is given.

中文翻译：

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磁场影响下的半导体晶体生长

半导体晶体生长的最新发展集中在提高处理效率和同时改善晶体质量上。为了提高晶体质量，精确而永久地控制熔体流动是至关重要的参数。为了获得更大的晶体，必须显着增加熔体的体积，从而导致不利地改变熔体对流。在切克劳斯基（Czochralski）生长的情况下，流动甚至可能变得湍流。这种变化的流动会干扰单晶的生长，并可能在晶体内引起掺杂剂的不均匀性。为了有效地影响熔体流动并因此改善生长条件，可以施加磁场。通常，在工业规模上应用稳定磁场（SMF）来抑制熔体流动的振荡。然而，与SMF相比，非SMF的应用也被证明非常有前途，因为显着降低的感应会在熔体中产生类似的影响。给出了磁场特征的概述，重点是在行进磁场的影响下可获得的结果。