Herein, the features of some Czochralski crystals with spiral morphology are investigated in detail to develop a model for their spiral growth. The case of a cylindrically growing crystal with a spontaneous transition to spiral growth is considered. At the onset of spiral growth, the development of a “foot” in the meniscus region is identified. It is shown that the growth of a foot takes place under “flaring growth conditions.” Insufficient axial heat transport through the crystal leads to a concave interface which is behind the flaring growth. The constraints of automatic weight control force the flaring crystal to grow as a spiral. The selection of a single foot is assisted by temperature fluctuations in the melt. Some symmetry breakings during spiral growth, for example, a meniscus deformation by rotation and the azimuthal growth in the meniscus, have been described already by the author earlier. Only recently spiral growth has been encountered with Czochralski silicon, grown at high pulling speed. These hypotheses on spiral growth hold for high‐melting‐point oxides as well as for the lower melting silicon.

中文翻译：

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重新研究了切克劳斯基工艺中的螺旋晶体生长，并有了新的解释

在此，详细研究了一些具有螺旋形态的直拉晶体的特征，以建立其螺旋生长的模型。考虑了自发地向螺旋生长过渡的圆柱形生长晶体的情况。在螺旋形增长开始时，便确定了弯月形区域中“脚”的发育。结果表明，脚的生长发生在“喇叭状生长条件”下。通过晶体的轴向热传递不足会导致凹形界面，而该界面在扩口生长之后。自动重量控制的约束迫使扩口的晶体呈螺旋状生长。熔体中的温度波动有助于单脚的选择。例如，螺旋状生长过程中出现了一些对称断裂，作者先前已经描述了旋转引起的弯液面变形和弯液面的方位角增长。切克劳斯基（Czochralski）硅直到最近才出现了螺旋式增长，这种硅以高拉速生长。这些关于螺旋生长的假设适用于高熔点氧化物和低熔点硅。