Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐substitute FeGa3–xGex are reported. Whereas there have been several investigations on the thermoelectric properties based on small samples grown by the flux method, this study is the first approach using the Czochralski growth technique from well‐oriented single‐crystalline seeds. Problems and solutions of the growth of cm3‐size single crystals are discussed in detail. Ge segregation in FeGa3–xGex is described by a segregation coefficient lower than unity which leads to an axially increasing Ge content along the pulling direction. Consequences with respect to lattice parameter changes and thermoanalytic measurements are reported.

中文翻译：

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使用直拉法在高温溶液中单晶生长 FeGa3 和 FeGa3-x Ge x

报道了二元半导体化合物 FeGa3 及其 Ge 替代物 FeGa3-xGex 的单晶生长和表征。尽管已经基于通过通量法生长的小样品对热电特性进行了多项研究，但本研究是第一种使用来自定向良好的单晶种子的直拉生长技术的方法。详细讨论了 cm3 尺寸单晶生长的问题和解决方案。FeGa3-xGex 中的 Ge 偏析由低于 1 的偏析系数描述，这导致沿拉动方向轴向增加 Ge 含量。报告了晶格参数变化和热分析测量的后果。