当前位置: X-MOL 学术Cryst. Res. Technol. › 论文详情
Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
Crystal Research and Technology ( IF 1.09 ) Pub Date : 2019-08-15 , DOI: 10.1002/crat.201900121
Johannes Steiner; Matthias Arzig; Alexey Denisov; Peter J. Wellmann

The investigation of the interplay of experimental crystal growth runs and computer simulations of the physical vapor transport (PVT) growth process of silicon carbide (SiC) strongly supports the development of the growth technology toward larger crystalline diameters. To apply computer‐aided designs of the growth process, a material database is developed that enables quantitative calculations of the temperature distribution inside the growth setup. The model utilizing COMSOL Multiphysics is validated by experimental means using five 100 mm SiC crystal growth runs, two measurement runs in a 100 mm PVT setup, and one SiC crystal growth run in a 75 mm PVT setup, varying in power, pressure, coil position, and reactor geometry. Material data are varied and the impact on the thermal gradients is investigated to trace out critical and noncritical parameters for the accuracy of the simulation. The influence of ambient pressure on the isolation's performance is studied experimentally and this correlation is implemented into the model. Beyond the state of the art, this work presents a modeling approach and handling of material properties for a true scale up of the current 100 mm and 150 mm SiC sublimation growth technologies to 200 mm.
更新日期:2020-02-12

 

全部期刊列表>>
Springer Nature 2019高下载量文章和章节
化学/材料学中国作者研究精选
《科学报告》最新环境科学研究
ACS材料视界
自然科研论文编辑服务
中南大学国家杰青杨华明
南开大学陈弓课题组招聘启事
中南大学
材料化学和生物传感方向博士后招聘
课题组网站
X-MOL
北京大学分子工程苏南研究院
华东师范大学分子机器及功能材料
中山大学化学工程与技术学院
试剂库存
天合科研
down
wechat
bug