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Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
Crystal Research and Technology ( IF 1.169 ) Pub Date : 2019-08-15 , DOI: 10.1002/crat.201900121
Johannes Steiner; Matthias Arzig; Alexey Denisov; Peter J. Wellmann

The investigation of the interplay of experimental crystal growth runs and computer simulations of the physical vapor transport (PVT) growth process of silicon carbide (SiC) strongly supports the development of the growth technology toward larger crystalline diameters. To apply computer‐aided designs of the growth process, a material database is developed that enables quantitative calculations of the temperature distribution inside the growth setup. The model utilizing COMSOL Multiphysics is validated by experimental means using five 100 mm SiC crystal growth runs, two measurement runs in a 100 mm PVT setup, and one SiC crystal growth run in a 75 mm PVT setup, varying in power, pressure, coil position, and reactor geometry. Material data are varied and the impact on the thermal gradients is investigated to trace out critical and noncritical parameters for the accuracy of the simulation. The influence of ambient pressure on the isolation's performance is studied experimentally and this correlation is implemented into the model. Beyond the state of the art, this work presents a modeling approach and handling of material properties for a true scale up of the current 100 mm and 150 mm SiC sublimation growth technologies to 200 mm.
更新日期:2020-02-12

 

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