The method of metalorganic vapor phase epitaxy (MOVPE) has developed over the recent 50 years into an indispensable tool in research and industrial production for novel compound semiconductor structures and devices. This article provides a brief explanation of its historical development and basic functionality. A major focus will be laid on the growth of group‐III nitride heterostructures which, on the one hand, owing to their unique material properties, impose challenging problems, but, on the other hand, have evolved into the most important semiconductor family just after silicon mainly due to their application in solid‐state lighting, which would not be possible without their successful growth by MOVPE.

中文翻译：

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用于光电应用的III类异质结构的MOVPE

在最近的50年中，金属有机气相外延方法（MOVPE）已发展成为新型化合物半导体结构和器件的研究和工业生产中必不可少的工具。本文简要介绍了它的历史发展和基本功能。Ⅲ族氮化物异质结构的发展将成为主要关注点，一方面，由于其独特的材料特性，它们带来了具有挑战性的问题，但另一方面，紧随其后已发展成为最重要的半导体家族硅主要是由于其在固态照明中的应用，如果没有MOVPE的成功发展，这将是不可能的。