Wet-chemical synthetic procedures are powerful strategies to afford fluorescent silicon quantum dots (Si QDs) in a versatile and scalable manner. However, development of Si QDs is still hampered by a lack of control over photoluminescence emission, in addition to synthesis and characterization complexities. The wet-chemical Si QD synthesis by oxidation of magnesium silicide (Mg₂Si) with bromine (Br₂) was revisited and a control reaction was carried out where the silicon source was omitted. Both reaction conditions resulted in substantial quantities of fluorescent material. Moreover, a comparative analysis of their optical properties (UV-vis/fluorescence) revealed no apparent differences. Other characterization techniques also confirmed the resemblance of the two materials as ¹H NMR, FTIR and XPS spectra were nearly identical for both samples. Elemental analysis revealed the presence of only 2 wt% silicon in the Si QD sample. No evidence was found for the formation of significant amounts of Si QDs via this wet-chemical procedure.

中文翻译：

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硅量子点的湿化学氧化合成的关键评估。

湿化学合成程序是以通用且可扩展的方式提供荧光硅量子点（Si QD）的强大策略。然而，除了合成和表征复杂性之外，Si QD的发展仍然由于缺乏对光致发光发射的控制而受到阻碍。再次讨论了通过用溴（Br ₂）氧化硅化镁（Mg ₂ Si）进行的湿化学Si QD合成，并进行了控制反应，其中省略了硅源。两种反应条件都导致大量的荧光物质。此外，对它们的光学性能（紫外可见/荧光）进行的比较分析没有发现明显的差异。其他表征技术也证实了这两种材料的相似之处：两种样品的¹ H NMR，FTIR和XPS光谱几乎相同。元素分析表明，Si QD样品中仅存在2 wt％的硅。没有发现通过这种湿化学方法形成大量的硅量子点的证据。