Hydrogenation is a crucial step for improving the efficiency of multicrystalline silicon solar cells. In this work, we investigate the influence of different firing and annealing conditions on the efficacy of bulk hydrogenation in state‐of‐the‐art high‐performance multicrystalline silicon, for a range of hydrogen‐containing dielectric layers. All of the dielectric films studied, including aluminium oxide, amorphous silicon, and silicon nitride deposited with different tools, yield similar bulk lifetimes when annealed at optimal conditions. However, the optimal conditions vary between films, depending on the film properties. The overall hydrogenation effect does not appear to be affected by the cooling rate used during firing or by the application of illuminated annealing, performed at 250 ° C under 8 sun illumination. Moreover, we monitor in situ changes in the recombination behaviour of grain boundaries during the hydrogenation process, using a micro‐photoluminescence spectroscopy system with a temperature controlled stage. It is found that the hydrogenation reaction occurs at the annealing temperature range between 400 ° C and 500 ° C.

中文翻译：

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多晶硅中的氢化：介电膜性能和烧结条件的影响

氢化是提高多晶硅太阳能电池效率的关键步骤。在这项工作中，我们针对一系列含氢介电层，研究了最先进的高性能多晶硅中不同烧成和退火条件对本体氢化效率的影响。当在最佳条件下退火时，所有研究的介电膜（包括氧化铝，非晶硅和氮化硅）均使用不同的工具沉积，可产生相似的体寿命。但是，取决于膜的性质，各膜之间的最佳条件不同。总体氢化效果似乎不受在烧制过程中使用的冷却速率或在250°C进行的光照退火的影响在8阳光下。此外，我们使用具有温度控制级的微光致发光光谱系统监控氢化过程中晶界重组行为的原位变化。发现氢化反应在400℃至500℃的退火温度范围内发生。