To suppress the high dielectric loss of graphene oxide (GO)/poly(vinylidene fluoride) (PVDF) while maintaining high dielectric constant (high-k) near the percolation threshold, in this study, GO nanosheets coated with polydopamine (PDA) were integrated into PVDF to investigate the effects of the PDA shell and its concentrations on the dielectric properties of the nanocomposites. The results indicate that the dissipation factor and conductivity of the GO@PDA/PVDF are significantly suppressed to very low values compared with the pristine GO/PVDF composites, attributable to the PDA interlayer between the GO nanosheets which prevents them from direct contact with each other and remarkably reduces the leakage loss. Furthermore, activation energies of the GO/PVDF and GO@PDA/PVDF composites were calculated as 1.247 and 0.884 eV, respectively, indicating that the presence of PDA interlayer reduces the relaxation activation energy and makes the relaxation occur at low temperature for the GO@PDA/PVDF. The prepared GO@PDA/PVDF nanocomposites with high-k but low loss have potential applications in microelectronic engineering.

中文翻译：

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PDA 对 GO 进行表面改性，用于具有良好抑制介电损耗的介电材料

为了抑制氧化石墨烯 (GO)/聚偏二氟乙烯 (PVDF) 的高介电损耗，同时在渗透阈值附近保持高介电常数 (high-k)，在本研究中，集成了涂有聚多巴胺 (PDA) 的 GO 纳米片进入 PVDF 以研究 PDA 壳及其浓度对纳米复合材料介电性能的影响。结果表明，与原始 GO/PVDF 复合材料相比，GO@PDA/PVDF 的损耗因数和电导率被显着抑制到非常低的值，这是由于 GO 纳米片之间的 PDA 夹层阻止了它们相互直接接触并显着降低泄漏损失。此外，GO/PVDF 和 GO@PDA/PVDF 复合材料的活化能分别计算为 1.247 和 0.884 eV，表明 PDA 夹层的存在降低了弛豫活化能，并使 GO@PDA/PVDF 在低温下发生弛豫。制备的高k低损耗GO@PDA/PVDF纳米复合材料在微电子工程中具有潜在的应用价值。