Abstract Temperature-dependent photoluminescence spectra of the germanium bottom cell of triple-junction solar cells unirradiated and irradiated with 1 MeV electrons were measured in the 10–300 K temperature range. In unirradiated germanium bottom cell, the spectra show that the PL intensity increases with temperature but slightly decreases at around 250 K because of the intrinsic defect. However, in irradiated germanium bottom cell, the spectra show that there are two negative thermal quenching processes (10–90 K and 200–270 K) and two usual thermal quenching processes (90–200 K and 270–300 K) as a result of the radiation-induced defects Ec − 0.37 eV and Ec − 0.12 eV.

中文翻译：

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使用温度相关的光致发光测量分析三结太阳能电池的锗底部电池中 1 MeV 电子辐射引起的性能退化

摘要 在 10-300 K 温度范围内测量了未辐照和 1 MeV 电子辐照的三结太阳能电池的锗底部电池的温度相关光致发光光谱。在未辐照的锗底部电池中，光谱显示 PL 强度随温度增加，但由于固有缺陷，在 250 K 附近略有下降。然而，在辐照的锗底部电池中，光谱显示有两种负热淬火过程（10-90 K 和 200-270 K）和两种常见的热淬火过程（90-200 K 和 270-300 K）辐射引起的缺陷 Ec - 0.37 eV 和 Ec - 0.12 eV。