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22%‐efficient Cd‐free Cu(In,Ga)(S,Se)2 solar cell by all‐dry process using Zn0.8Mg0.2O and Zn0.9Mg0.1O:B as buffer and transparent conductive oxide layers
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2019-10-23 , DOI: 10.1002/pip.3210
Jakapan Chantana 1, 2 , Yu Kawano 1 , Takahito Nishimura 3 , Yoshinori Kimoto 4 , Takuya Kato 4 , Hiroki Sugimoto 4 , Takashi Minemoto 1
Affiliation  

Cd‐free Cu(In,Ga)(S,Se)2 (CIGSSe)‐based solar cell fabricated by all‐dry process is developed to eliminate optical loss in CdS buffer and be readily applied into in‐line process. (Zn,Mg)O:B (BZMO) films can be deposited with the increased band‐gap energy (Eg) by metal organic chemical vapor deposition, and their optical and electrical properties are compared with those of (Zn,Mg)O:Al (AZMO) films prepared by sputtering method. It is shown that the AZMO and BZMO are suitable as transparent conductive oxide (TCO) layer to avoid the optical loss at short wavelength of the solar cell. The free‐carrier absorption of the BZMO films is additionally lower than that of the AZMO, attributable to the lower carrier concentration. The low resistivity of the BZMO films with Mg content up to 0.1 in a range of 3 × 10−2 to 6 × 10−2 Ω.cm is observed. The CIGSSe solar cells are then fabricated with the Cs‐treated CIGSSe layers as the absorbers. Consequently, the CIGSSe solar cell with the conventional CdS buffer layer possesses the conversion efficiency (η) of 21.7%. In addition, Cd‐free CIGSSe solar with a structure of glass/Mo/CIGSSe/Zn0.8Mg0.2O/Zn0.9Mg0.1O:B has the increased short‐circuit current density to 39.8 mA/cm2, thereby enhancing the η to 22.0%. This is because there is the reduced free‐carrier absorption and increased Eg (3.57 eV) of Zn0.9Mg0.1O:B layer, which is proved for the high‐level technology. The recombination rates of the solar cells are moreover discussed.

中文翻译:

采用Zn0.8Mg0.2O和Zn0.9Mg0.1O:B作为缓冲层和透明导电氧化物层的全干工艺,实现22%效率的无镉Cu(In,Ga)(S,Se)2太阳能电池

通过全干法工艺制造的无镉Cu(In,Ga)(S,Se)2(CIGSSe)基太阳能电池的开发旨在消除CdS缓冲液中的光损耗,并易于应用于在线工艺中。(Zn,Mg)O:B(BZMO)膜可以增加带隙能量(E g)通过金属有机化学气相沉积,并将它们的光学和电学性质与通过溅射方法制备的(Zn,Mg)O:Al(AZMO)膜的光学和电学性质进行比较。已经表明,AZMO和BZMO适合用作透明导电氧化物(TCO)层,以避免太阳能电池在短波长下的光损耗。由于较低的载流子浓度,BZMO膜的自由载流子吸收另外低于AZMO。Mg含量高达0.1的BZMO膜在3×10 -2到6×10 -2范围内的低电阻率观察到Ω.cm。然后,用经过Cs处理的CIGSSe层作为吸收体来制造CIGSSe太阳能电池。因此,具有常规CdS缓冲层的CIGSSe太阳能电池具有21.7%的转换效率(η)。此外,玻璃/ Mo / CIGSSe / Zn 0.8 Mg 0.2 O / Zn 0.9 Mg 0.1 O:B结构的无镉CIGSSe太阳能电池的短路电流密度增加到39.8 mA / cm 2,从而提高了η至22.0%。这是因为Zn 0.9 Mg 0.1的自由载流子吸收降低并且E g(3.57 eV)增加O:B层,已被高级技术证明。此外,讨论了太阳能电池的复合率。
更新日期:2019-10-23
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