Electronic devices based on organic single-crystal semiconductors have been used in a range of applications, suggesting their possible use as core components of high-performance electronic devices. Various electronic devices based on unipolar organic semiconducting crystals have high electrical and optoelectronic properties compared to thin-film-based devices due to the intrinsic nature of the single crystal, such as a long-range order and a high degree of structural perfection. However, only a few studies have examined electronic devices using organic single crystals with ambipolar characteristics. This study investigated the electrical and optoelectronic characteristics of a core–shell organic semiconducting crystal composed of an n-type single-crystal nanowire as the core and p-type single crystal as the shell. The device showed ambipolar behavior with balanced electron and hole mobilities (maximum electron and hole mobility of the core–shell ambipolar crystal; 1.41 × 10^–1 and 8.31 × 10^–2 cm² V^–1 s^–1, respectively). A core–shell ambipolar crystal was also used as the photoactive layer of a complementary metal–oxide–semiconductor (CMOS)-like inverter, and sharp voltage conversion was observed near 50 V at a supply voltage of 100 V with a gain of 23.7. Furthermore, phototransistors based on core–shell organic crystals had excellent optoelectronic characteristics with remarkable performance; the estimated photoresponsivity (R), photocurrent/dark-current ratio (P), external quantum ratio (EQE, η), and detectivity (D*) were 4.91 × 10⁴ A W^–1, 2.14 × 10², 1.23 × 10⁷%, and 1.03 × 10¹⁵ Jones, respectively. Phototransistors based on core–shell semiconducting crystals also showed rapid photoswitching behaviors under pulsed incident light. The ambipolar core–shell crystals we developed can potentially be used for various applications, including high-performance integrated circuits and photosensing electronic devices.

中文翻译：

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基于核-壳p-n结有机单晶的高性能双极性有机光电晶体管

基于有机单晶半导体的电子设备已在一系列应用中使用，表明它们有可能用作高性能电子设备的核心组件。与基于薄膜的器件相比，基于单极有机半导体晶体的各种电子器件由于单晶的固有性质（例如，长程有序和高度的结构完善性）而具有比基于薄膜的器件更高的电学和光电学性能。但是，只有少数研究检查了使用具有双极性特性的有机单晶的电子设备。这项研究研究了以n型单晶纳米线为核，p型单晶为核的核－壳有机半导体晶体的电学和光电特性。^–1和8.31×10 ^–2 cm ² V ^–1 s ^–1）。核-壳双极性晶体也用作互补金属氧化物半导体（CMOS）反相器的光敏层，在100 V的电源电压下，在50 V附近观察到急剧的电压转换，增益为23.7。此外，基于核-壳有机晶体的光电晶体管具有出色的光电特性和出色的性能。所估计的光响应（[R ），光电流/暗电流比（P），外部量子比（EQE，η），和探测（d *）为4.91×10 ⁴ AW ^-1，2.14×10²，1.23×10 ⁷％，和1.03×10 ¹⁵琼斯，分别。基于核-壳半导体晶体的光电晶体管在脉冲入射光下也显示出快速的光开关行为。我们开发的双极性核-壳晶体可以潜在地用于各种应用，包括高性能集成电路和光敏电子设备。