The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches.

对改进的电子和光电器件的需求推动了单晶半导体外延生长技术的发展。然而，晶格和热膨胀系数失配问题限制了在异种材料上生长和集成高效电子和光子器件的选择。因此，已经开发了先进的外延生长和层剥离技术来解决与晶格失配有关的问题。在这里，我们回顾了用于高级电子和光子器件中的异种单晶材料的单片集成的外延生长和层转移技术。