Abstract 3C–SiC is a promising platform for semiconductor spintronics because it consists of light group-IV elements and has a zinc blende structure. To demonstrate spin transport in this attractive semiconductor, we conducted an experiment of spin-pump-induced spin transport through n-type 3C–SiC. A spin current is injected from Ni80Fe20 into the SiC channel under ferromagnetic resonance of the Ni80Fe20. The DC electromotive force caused by the inverse spin Hall effect in an adjacent metal detector attached to the SiC is detected as a manifestation of the spin current transport. This indicates 1.2-μm-long spin transport through the n-type 3C–SiC at room temperature. This achievement is the first step in the investigation of the physics of 3C–SiC for further spintronics study and its application.

中文翻译：

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在横向自旋泵浦装置中观察到的 n 型 3C-SiC 中的自旋输运

摘要 3C-SiC 是一种很有前途的半导体自旋电子学平台，因为它由轻 IV 族元素组成，并具有闪锌矿结构。为了证明这种有吸引力的半导体中的自旋输运，我们通过 n 型 3C-SiC 进行了自旋泵诱导的自旋输运实验。在 Ni80Fe20 的铁磁共振下，自旋电流从 Ni80Fe20 注入 SiC 通道。在连接到 SiC 的相邻金属探测器中，由逆自旋霍尔效应引起的直流电动势被检测为自旋电流传输的一种表现形式。这表明在室温下通过 n 型 3C-SiC 有 1.2 微米长的自旋输运。这一成果是研究 3C-SiC 物理以进一步自旋电子学研究及其应用的第一步。